2SD473 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output st

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Datasheet Details

Part number	2SD473
Manufacturer	Inchange Semiconductor
File Size	180.94 KB
Description	NPN Transistor
Datasheet	2SD473 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.