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2SD531 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max.) @ IC= 4.0A With TO-220C Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD531 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max.) @ IC= 4.0A ·With TO-220C Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.