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2SD536 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Excellent Safe Operating Area High Current Capability Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD536 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converters. ·General purpose power amplifiers.