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2SD552 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min) High Power Dissipation Complement to Type 2SB552 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier, power switching applications.

DC-DC converter an

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isc Silicon NPN Power Transistor 2SD552 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min) ·High Power Dissipation ·Complement to Type 2SB552 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier, power switching applications. ·DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IE Emitter Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.