2SD555 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·plement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current and high power applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD555 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
