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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD555
DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS speed ,high current ,high power applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
www.DataSheet4U.com ·For high
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 5 10 200 150 -55~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.