2SD555 datasheet by Inchange Semiconductor.
| Part number | 2SD555 |
|---|---|
| Datasheet | 2SD555-INCHANGE.pdf |
| File Size | 203.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·plement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current and high power applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD555 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD555 | Silicon NPN Power Transistors | SavantIC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD550 | NPN Transistor |
| 2SD551 | NPN Transistor |
| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD554 | NPN Transistor |
| 2SD556 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |
