Datasheet Details
| Part number | 2SD555 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.62 KB |
| Description | NPN Transistor |
| Datasheet | 2SD555-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD555 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.62 KB |
| Description | NPN Transistor |
| Datasheet | 2SD555-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current and high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 200 W 150 ℃ Tstg Storage Temperature Range -55~200 ℃ 2SD555 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD555 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD555 | Silicon NPN Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SD550 | NPN Transistor |
| 2SD551 | NPN Transistor |
| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD554 | NPN Transistor |
| 2SD556 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |