Datasheet Details
| Part number | 2SD551 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD551-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD551 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD551-INCHANGE.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier applications.
·Recommended for use in output stage of 80 watts power amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD551 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD551 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD551 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD550 | NPN Transistor |
| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD554 | NPN Transistor |
| 2SD555 | NPN Transistor |
| 2SD556 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |