Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
- plement to Type 2SB681
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For AF power amplifier applications.
- Remended for use in output stage of 80 watts power amplifier...
