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2SD551 - NPN Transistor

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Part number 2SD551
Manufacturer INCHANGE
File Size 203.58 KB
Description NPN Transistor
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Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Complement to Type 2SB681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier applications. Recommended for use in output stage of 80 watts power amplifier .ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Ba

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