2SD556 datasheet by Inchange Semiconductor.
| Part number | 2SD556 |
|---|---|
| Datasheet | 2SD556-INCHANGE.pdf |
| File Size | 176.59 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power AF amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD556 TC=25℃ unless otherwise specified SYMBOL...
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| 2SD550 | NPN Transistor |
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| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD554 | NPN Transistor |
| 2SD555 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |
