2SD556 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power AF amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD556 TC=25℃ unless otherwise specified SYMBOL...