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2SD553 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4A Complement to Type 2SB553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching

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Datasheet Details

Part number 2SD553
Manufacturer INCHANGE
File Size 209.45 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD553 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4A ·Complement to Type 2SB553 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 1.
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