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2SD553 - NPN Transistor

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Part number 2SD553
Manufacturer INCHANGE
File Size 209.45 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4A Complement to Type 2SB553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.

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