Datasheet Details
| Part number | 2SD554 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SD554-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD554.
| Part number | 2SD554 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SD554-INCHANGE.pdf |
|
|
|
·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=30W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD554 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Part Number | Description |
|---|---|
| 2SD550 | NPN Transistor |
| 2SD551 | NPN Transistor |
| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD555 | NPN Transistor |
| 2SD556 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |