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2SD550 - NPN Transistor

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Part number 2SD550
Manufacturer INCHANGE
File Size 197.22 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= 0.8V(Max)@IC= 5A With TO-66 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications.

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