Datasheet Details
| Part number | 2SD550 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD550-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD550.
| Part number | 2SD550 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD550-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.8V(Max)@IC= 5A ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD550 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Part Number | Description |
|---|---|
| 2SD551 | NPN Transistor |
| 2SD552 | NPN Transistor |
| 2SD553 | NPN Transistor |
| 2SD554 | NPN Transistor |
| 2SD555 | NPN Transistor |
| 2SD556 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |