2SD650 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as:

📥 Download Datasheet

2SD650 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD650
Manufacturer	Inchange Semiconductor
File Size	191.78 KB
Description	NPN Transistor
Datasheet	2SD650 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD655	Silicon NPN Transistor	Hitachi Semiconductor
2SD655	NPN Silicon Transistor	SEMTECH
2SD655	Silicon NPN transistor	BLUE ROCKET ELECTRONICS
2SD655	Silicon NPN Epitaxial Transistor	Renesas
2SD600	PNP/NPN Epitaxial Planar Silicon Transistor	Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SD651	NPN Transistor
2SD652	NPN Transistor
2SD657	NPN Transistor
2SD60	NPN Transistor
2SD600	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD650 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current 6 ICM Collector Current-peak 8 IB Base Current 0.