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2SD670 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio outp

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD670 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 20 A 0.