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2SD679 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 70V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 3A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpo

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 70V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.