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2SD687 Datasheet - INCHANGE

NPN Transistor

2SD687 General Description

*High DC Current Gain- : hFE = 2000(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD687 Datasheet (205.87 KB)

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Datasheet Details

Part number:

2SD687

Manufacturer:

INCHANGE

File Size:

205.87 KB

Description:

Npn transistor.

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2SD687 NPN Transistor INCHANGE

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