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2SD687
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS.
FEATURES : . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO V CEO v EBO
*C PC TJ Tstg
RATING 60 40
5 3 25
150 -55^150
EQUIVALENT CIRCUIT
-COLLECTOR
UNIT V V V A W
°C °C
INDUSTRIAL APPLICATIONS Unit in mm
lO.SMAX. 0Z.6±O2
^
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TO — 220 AB
=4.
2SD687 Datasheet
