2SD690 - NPN Transistor

Inchange Semiconductor

General Description

Collector Current: IC= 7A Collector-Emitter BreakdownVoltage- : V(BR)CEO= 70V(Min.) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV horizontal deflection applications.

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2SD690 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD690
Manufacturer	Inchange Semiconductor
File Size	196.83 KB
Description	NPN Transistor
Datasheet	2SD690 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD690 DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 70V(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.