Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 450V(Min)
High Power Dissipation
Low Collector Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for line operated switchmode applications such as:
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD693
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 450V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
450
VCEO
Collector-Emitter Voltage
450
VEBO
Emitter-Base Voltage
10
IC
Collector Current
10
ICM
Collector Current-peak
15
IB
Base Current
1
PC
Collector Power Dissipation @TC=25℃
80
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V
2SD693 Datasheet
