2SD723 Overview
·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·DC Current Gain -hFE = 50(Min)@ IC= 0.5A ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification...