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2SD723 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) DC Current Gain -hFE = 50(Min)@ IC= 0.5A Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general p

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isc Silicon NPN Power Transistor isc Product Specification 2SD723 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·DC Current Gain -hFE = 50(Min)@ IC= 0.5A ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.