Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
High Power Dissipation
Complement to Type 2SB690
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier applications.
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isc Silicon NPNPower Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
2SD726
isc website：www.iscsemi.
2SD726 Datasheet
