900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SD726 Datasheet Preview

2SD726 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPNPower Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High Power Dissipation
·Complement to Type 2SB690
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
8
A
40
W
150
Tstg
Storage Temperature Range
-45~150
2SD726
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD726 Datasheet Preview

2SD726 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPNPower Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 0.1A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 20V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
hFE-1 Classifications
B
C
60-120 100-200
2SD726
MIN TYP. MAX UNIT
80
V
5
V
2.0
V
1.5
V
0.1 mA
60
200
35
40
pF
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD726
Description Silicon NPN Power Transistor
Maker INCHANGE
PDF Download

2SD726 Datasheet PDF






Similar Datasheet

1 2SD72 NPN Transistor
ETC
2 2SD721 NPN Transistor
ETC
3 2SD721 NPN Transistor
ETC
4 2SD722 NPN Transistor
ETC
5 2SD723 NPN Transistor
INCHANGE
6 2SD725 SILICON POWER TRANSISTOR
SavantIC
7 2SD725 NPN Transistor
INCHANGE
8 2SD726 Silicon NPN Power Transistor
INCHANGE
9 2SD727 SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy