2SD726
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
- High Power Dissipation
- plement to Type 2SB690
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-45~150 ℃
2SD726 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPNPower Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
