2SD726 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·plement to Type 2SB690 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPNPower Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...