Datasheet Details
| Part number | 2SD726 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.13 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD726-INCHANGE.pdf |
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Overview: isc Silicon NPNPower Transistor.
| Part number | 2SD726 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.13 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD726-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD726 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPNPower Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA;
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