2SD803 Overview
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor TC=25℃...