2SD803
2SD803 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- High DC current gain- h FE = 2000 (Min) @ IC =1 Adc
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current -Continuous
Base Current -Continuous
Collector Power Dissipation@TC=25℃ 100
Tj
Junction Temperature
℃
Tstg
Storage Temperature
-65~150 ℃
2SD803 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS...
