Datasheet4U Logo Datasheet4U.com

2SD803 - NPN Transistor

Datasheet Summary

Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 2000 (Min) @ IC =1 Adc Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

Datasheet preview – 2SD803

Datasheet Details

Part number 2SD803
Manufacturer INCHANGE
File Size 200.26 KB
Description NPN Transistor
Datasheet download datasheet 2SD803 Datasheet
Additional preview pages of the 2SD803 datasheet.

📁 Similar Datasheet

  • 2SD809 - NPN Transistor (ETC)
  • 2SD811 - Silicon NPN Transistor (Toshiba)
  • 2SD813 - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD814 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD814A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD817 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD818 - NPN Transistor (Toshiba)
  • 2SD819 - NPN Transistor (Toshiba)
  • 2SD820 - NPN Transistor (Toshiba)
  • 2SD820 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 8 A IB Base Current -Continuous 1 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD803 isc website：www.iscsemi.
Published: |