2SD807 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Low collector saturation voltage With TO-3 Package

and reliable operation.

Designed for high voltage power switching TV horizontal deflection output applicat

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2SD807 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD807
Manufacturer	Inchange Semiconductor
File Size	208.95 KB
Description	NPN Transistor
Datasheet	2SD807 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD807 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·With TO-3 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -65-150 ℃ isc website：www.iscsemi.