Datasheet4U Logo Datasheet4U.com

2SD819 - NPN Transistor

General Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) Low Collector Saturation Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for color TV horizontal output applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD819 NPN Transistor Toshiba
2SD811 Silicon NPN Transistor Toshiba
2SD813 Si NPN Transistor Panasonic Semiconductor
2SD814 Silicon NPN Transistor Panasonic Semiconductor
2SD814A Silicon NPN Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD811 NPN Transistor
2SD812 NPN Transistor
2SD817 NPN Transistor
2SD818 Silicon NPN Power Transistor
2SD800 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SD819 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.