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2SD834 - NPN Transistor

General Description

High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V Low Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A Wide Area of Safe Operation High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignitor

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·Wide Area of Safe Operation ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Switching regulators ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VCEO(SUS) Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.