High Collector Current:: IC= 7A
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A
High Collector Power Dissipation
Complement to Type 2SB753
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High current switchin
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD843
isc website：www.iscsemi.
2SD843 Datasheet
