2SD882U-P Overview
·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A.
