Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
High Current Capability
Good Linearity of hFE
High Reliability
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio amplifier
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD911
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High Current Capability ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio amplifier ·Series regulators ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
2SD911 Datasheet
