| Part number | 2SD916 |
|---|---|
| Datasheet | 2SD916-INCHANGE.pdf |
| File Size | 209.20 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SD911 | NPN Transistor |
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| 2SD900 | NPN Transistor |
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| 2SD907 | NPN Transistor |
| 2SD909 | NPN Transistor |
| 2SD920 | NPN Transistor |
| 2SD928 | NPN Transistor |
| 2SD929 | NPN Transistor |
| 2SD930 | NPN Transistor |
