Datasheet Details
| Part number | 2SD917 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD917-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD917 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD917-INCHANGE.pdf |
|
|
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse ICP Collector Current-Pulse Nonrepetitive PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 15 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD917 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD917 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD917 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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