2SD917 Description
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD917 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.