2SD917
Description
High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) High Power Dissipation High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD917
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 208.01 KB
Datasheets by Manufacturer
- 2SD916 — Fuji Electric — POWER DARLINGTON TRANSISTORS