| Part number | 2SD911 |
|---|---|
| Datasheet | 2SD911-INCHANGE.pdf |
| File Size | 176.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD911 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;.
See all Inchange Semiconductor datasheets
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| 2SD916 | NPN Transistor |
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| 2SD900 | NPN Transistor |
| 2SD904 | NPN Transistor |
| 2SD907 | NPN Transistor |
| 2SD909 | NPN Transistor |
| 2SD920 | NPN Transistor |
| 2SD928 | NPN Transistor |
| 2SD929 | NPN Transistor |
| 2SD930 | NPN Transistor |
