2SD911 Description
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD911 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;.