2SD971
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) High DC Current Gain High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD971
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 198.38 KB