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2SD971 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) High DC Current Gain High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as elec

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD971 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc.