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2SD972 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 50V(Min) High DC Current Gain High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifier

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD972 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 50V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.