Datasheet4U Logo Datasheet4U.com

2SK1167 - N-Channel MOSFET

Features

  • With TO-3PN packaging.
  • Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX).
  • Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

📥 Download Datasheet

Datasheet preview – 2SK1167

📁 Similar Datasheet

  • 2SK1167 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1167 - Silicon N-Channel MOSFET (Renesas)
  • 2SK1160 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1160 - Silicon N-Channel MOSFET (Renesas)
  • 2SK1161 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1161 - Silicon N-Channel MOSFET (Renesas)
  • 2SK1162 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1162 - Silicon N-Channel MOSFET (Renesas)
  • 2SK1163 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK1164 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX) ·Enhancement mode: Vth = 3.0 to 4.
Published: |