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2SK2221 - N-Channel MOSFET

Key Features

  • Drain Current ID= 8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2221 ·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 100 W Tj Max.