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isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching Regulator Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
48
PD
Total Dissipation @TC=25℃
40
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.125
UNIT ℃/W
2SK3568
isc website：www.iscsemi.
2SK3568 Datasheet
