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2SK3566 - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤6.4Ω.
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor 2SK3566，I2SK3566 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤6.4Ω. ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2.5 IDM Drain Current-Single Pulsed 7.5 PD Total Dissipation @TC=25℃ 40 Tj Max.