2SK356
2SK356 is N-Channel Transistor manufactured by Toshiba.
FEATURES
. Low Drain-Source ON Resistance : Rd S(ON)=0- 2Q(Typ . . High Forward Transfer Admittance : ] Yf s | =6S (Typ . . Low Leakage Current : Ics S^OOn ACMax. ) @ Vgs=±20V
. Enhancement-Mode l DSS=lm A(Max.) @ VDS=250V
: Vfj^l . 5 ~ 3. 5V @ l D=lm A
INDUSTRIAL APPLICATIONS Unit in mm
02 5.0 MAX
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
VDSX
Gate-Source Voltage
Vg SS
±20
Drain Current
Pulse
Drain Power Dissipation
(Tc=25°C)
Channel Temperature
Storage Temperature Range
ID idp Pd
Teh
-stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
12 30 120
-65-150
°C °C
1. GATE 2. SOURCE
DRAIN (CASE)
TO- 2 4MA/TO-3
EIA J
TC-3 , TB-3
TOSHIBA
2-21E1B
Weight : 15.
CHARACTERISTIC
SYMBOL...
