2SK356 - N-Channel Transistor

Toshiba

Key Features

. Low Drain-Source ON Resistance : RdS(ON)=0- 2Q(Typ . . High Forward Transfer Admittance : ] Yf s | =6S (Typ . . Low Leakage Current : IcsS^OOnACMax. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max. ) @ VDS=250V : Vfj^l . 5 ~ 3. 5V @ lD=lmA.

2SK356 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK356
Manufacturer	Toshiba
File Size	43.07 KB
Description	N-Channel Transistor
Datasheet	2SK356 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK3560	N-Channel MOSFET	Panasonic Semiconductor
2SK3560	Silicon N-channel power MOSFET	Kexin
2SK3561	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3562	N-Channel MOSFET	Toshiba Semiconductor
2SK3562	N-Channel MOSFET Transistor	Inchange Semiconductor

Other Datasheets by Toshiba

Part Number	Description
2SK3561	Silicon N-Channel MOSFET
2SK3566	Silicon N-Channel MOSFET
2SK3543	N-Channel MOSFET
2SK355	N-Channel Transistor
2SK357	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK356 SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DTIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance : RdS(ON)=0- 2Q(Typ . . High Forward Transfer Admittance : ] Yf s | =6S (Typ . . Low Leakage Current : IcsS^OOnACMax. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VDS=250V : Vfj^l . 5 ~ 3. 5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 02 5.0 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 250 Gate-Source Voltage VgSS ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID idp Pd Teh -stg ELECTRICAL CHARACTERISTICS (Ta=25°C) 12 30 120 150 -65-150 °C °C 1. GATE 2.