3DD103E transistor equivalent, npn transistor.
*Designed for power amplifier , DC-DC converts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCB.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
*DC Current Gain-
: hFE= 10(Min.)@IC= 1.5A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 4V(Max)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device
performance an.
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