3DD103E
3DD103E is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
- DC Current Gain-
: h FE= 10(Min.)@IC= 1.5A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 4V(Max)@ IC= 3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier , DC-DC...
