900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

3DD13009K Datasheet Preview

3DD13009K Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage
·High switching speed
·High current capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Energy-saving ligh
·Electronic ballasts
·High frequency switching power supply
·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
12
A
100
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.25 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
3DD13009K
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

3DD13009K Datasheet Preview

3DD13009K Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 700V; IE=0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
3DD13009K
MIN TYP. MAX UNIT
400
V
1.2
V
1.8
V
1.8
V
0.1 mA
0.01 mA
8
40
5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 3DD13009K
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

3DD13009K Datasheet PDF





Similar Datasheet

1 3DD13009 NPN Transistor
INCHANGE
2 3DD13009 NPN Transistor
LGE
3 3DD13009 Silicon NPN Transistor
ETC
4 3DD13009 NPN Transistor
Dayan Technology
5 3DD13009-A9 Silicon NPN Transistor
ETC
6 3DD13009A8 Silicon NPN Transistor
Huajing Microelectronics
7 3DD13009A9 Silicon NPN bipolar transistor
Huajing Microelectronics
8 3DD13009AN Silicon NPN Transistor
Huajing Microelectronics
9 3DD13009B8 Silicon NPN bipolar transistor
Huajing Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy