3DD167C - NPN Transistor

Description

With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABS

INCHANGE

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Datasheet Details

Part number	3DD167C
Manufacturer	INCHANGE
File Size	188.59 KB
Description	NPN Transistor
Datasheet	3DD167C Datasheet
Additional preview pages of the 3DD167C datasheet.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A PD Total Power Dissipation@TC=75℃ 150 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.

Published: Sep 5, 2020 |