Datasheet Details
| Part number | 50N06FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.47 KB |
| Description | N-Channel MOSFET |
| Download | 50N06FI Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 50N06FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.47 KB |
| Description | N-Channel MOSFET |
| Download | 50N06FI Download (PDF) |
|
|
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·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 ID A Drain Current-continuous@ TC=100℃ 19 Ptot Total Dissipation@TC=25℃ 45 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 50N06FI isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| CHONGQING PINGYANG | 50N06F | N-CHANNEL MOSFET | CHONGQING PINGYANG |
| CHONGQING PINGYANG | 50N06 | N-CHANNEL MOSFET | CHONGQING PINGYANG |
| ETC | 50N06 | Low voltage high current power MOSFET | ETC |
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50N06 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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50N06 | N-CHANNEL POWER MOSFET | UTC |
| Part Number | Description |
|---|---|
| 50N15 | N-Channel MOSFET |