Datasheet Details
| Part number | 8N90A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.46 KB |
| Description | N-Channel MOSFET |
| Download | 8N90A Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | 8N90A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.46 KB |
| Description | N-Channel MOSFET |
| Download | 8N90A Download (PDF) |
|
|
|
·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.52 ℃/W 8N90A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
Compare 8N90A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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8N90 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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8N90 | 900V N-CHANNEL MOSFET | Unisonic Technologies |
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8N90-FC | N-CHANNEL POWER MOSFET | UTC |
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8N90K5 | N-channel Power MOSFET | STMicroelectronics |
| Part Number | Description |
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