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BC807-40 - PNP Transistor

Description

High current(max.

Low Voltage(Min.

NPN complement BC817-25 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

General purpose switching and amplification.

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INCHANGE Semiconductor isc Silicon PNP General Purpose Transistors BC807-40 DESCRIPTION ·High current(max. 500mA) ·Low Voltage(Min. 45V) ·NPN complement BC817-25 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose switching and amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -50 -45 -5 -0.5 0.25 150 -65~150 UNIT V V V A W ℃ ℃ isc website：www.iscsemi.
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