BC807-40
DESCRIPTION
- High current(max. 500m A)
- Low Voltage(Min. 45V)
- NPN plement BC817-25
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- General purpose switching and amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
Tstg
Storage Temperature
VALUE -50 -45 -5 -0.5 0.25 150
-65~150
UNIT V V V A W ℃ ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
GE Semiconductor isc Silicon PNP General Purpose Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)- Collector-Emitter Saturation Voltage IC= -500m A; IB= -50m A
VBE(on) Base-Emitter On Voltage
IC= -500m A; VCE= -1V
ICBO
Collector Cutoff Current
VCB=-20 V; IE=...
