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BD239A - NPN Transistor

Download the BD239A datasheet PDF (BD239 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn transistor.

Description

DC Current Gain -hFE = 40(Min)@ IC= 0.2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C Complement to Type BD240/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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Note: The manufacturer provides a single datasheet file (BD239-INCHANGE.pdf) that lists specifications for multiple related part numbers.
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C ·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
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