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BD303 - NPN Transistor

Description

DC Current Gain - : hFE = 30(Min.)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Complement to Type BD304 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertica

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BD302 Silicon PNP Power Transistor Inchange Semiconductor Company Limited

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isc Silicon NPN Power Transistor BD303 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Complement to Type BD304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.
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