900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BD335 Datasheet Preview

BD335 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD335
DESCRIPTION
·High DC Current Gain
·Complement to type BD336
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·NPN epitaxial base transistors in monolithic Darlington
circuit for audio output stages and general amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IBM
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ TC=25
Junction Temperature
Storage Temperature Range
100
V
100
V
6
V
6
A
0.15
A
60
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.08 /W
Rth j-a Thermal Resistance,Junction to Ambient 100 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD335 Datasheet Preview

BD335 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD335
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; VCE= 3V
VCB= 100V; IE= 0
VCB= 100V; IE= 0,TC=150
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 3A; VCE=3V
hFE-3*
DC Current Gain
IC= 6A; VCE= 3V
*:Measured under pulse conditions:tp<300us,σ<2%
MIN TYP. MAX UNIT
100
V
2.0
V
2.5
V
0.1
1.0
mA
5
mA
1900
750
3000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD335
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BD335 Datasheet PDF





Similar Datasheet

1 BD330 PNP power transistor
NXP
2 BD330 Silicon PNP Power Transistor
Inchange Semiconductor
3 BD331 Complementary Power Darlingtons
ST Microelectronics
4 BD331 Silicon Darlington Power Transistors
NXP
5 BD331 NPN Transistor
INCHANGE
6 BD332 Complementary Power Darlingtons
ST Microelectronics
7 BD332 SILICON DARLINGTON POWER TRANSISTOR
NXP Semiconductors
8 BD332 PNP Transistor
INCHANGE
9 BD333 NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy