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BD336 - PNP Transistor

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General Description

·High DC Current Gain ·Complement to type BD335 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -100 V -100 V -6 V -6 A -0.15 A 60 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD336.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo BD336 SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics
NXP Semiconductors Logo BD336 SILICON DARLINGTON POWER TRANSISTOR NXP Semiconductors

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