BD540B
DESCRIPTION
- DC Current Gain
- : h FE = 40(Min.)@ IC= -0.5A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
- plement to Type BD539B
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
-5
2...
