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Inchange Semiconductor
BD540
DESCRIPTION - DC Current Gain - : h FE = 40(Min.)@ IC= -0.5A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) - plement to Type BD539 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -5 Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Tstg Storage Temperature Range -5 2...